MOL contact metallization scheme for improved yield and device reliability

摘要

A method of forming a metalized contact in MOL is provided. Embodiments include forming a TT through an ILD down to a S/D region; forming a SiOC, SiCN, or SiON layer on side surfaces of the TT; performing a GCIB vertical etching at a 0° angle; implanting Si into the TT by an angled PAI; removing a portion of the TT by Ar sputtering and a remote plasma assisted dry etch process; forming NiSi on the S/D region at the bottom of the TT; and filling the TT with contact metal over the NiSi.

主权项

1. A method comprising:
forming a trench contact (TT) through an interlayer dielectric (ILD) down to a source/drain region; forming a silicon oxycarbide (SiOC), silicon carbon nitride (SiCN), or silicon oxynitride (SiON) layer on side surfaces of the TT; performing a gas cluster ion beam (GCIB) vertical etching at a 0° angle; implanting silicon (Si) into the TT by an angled pre-amorphous implantation (PAI); removing a portion of the TT by Ar sputtering and a remote plasma assisted dry etch process; forming nickel silicide (NiSi) on the source/drain (S/D) region at the bottom of the TT by:
depositing nickel platinum (NiPt) in the TT by plasma vapor deposition;depositing titanium nitride (TiN) in the TT; andperforming a first rapid thermal anneal (RTA) 260° C. for 20 s and a second RTA at 420° C. for 30 s; and filling the TT with contact metal over the NiSi.