Implementing deposition growth method for magnetic memory

摘要

A magnetic memory array and a method for implementing the magnetic memory array for use in Solid-State Drives (SSDs) are provided. A plurality of magnetic pillar memory cells is formed using a deposition and/or growth process to produce a magnetic memory array substantially avoiding milling of magnetic materials.

主权项

1. A magnetic memory array comprising:
a plurality of magnetic pillar memory cells includes a first conductor M1 being formed of a magnetic material, and a second conductor M2 being more electrically conductive than said conductor M1, a non-magnetic spacer layer coating said second conductor M2, said first magnetic conductor M1 disposed over said coated second conductor M2; an oxide barrier disposed over said grown first magnetic conductor M1 forming magnetic pillar memory cells; an interlayer dielectric (IDL) stack of word planes separated by a respective IDL extending between said plurality of magnetic pillar memory cells; and each of said magnetic pillar memory cells having a programmable area using unpatterned programmable magnetic media proximate to a respective word plane.