| 发明名称 | Sensing electrode structure | ||
| 摘要 | A sensing electrode structure formed on a substrate of a touch device is provided. The sensing electrode structure includes: a first sensing electrode row; a second sensing electrode row, parallel to the first sensing electrode row, including a plurality of second sensing electrode units; and a guard ring, surrounding the second sensing electrode row, including a plurality of guard electrodes arranged between each two of the second sensing electrode units. | ||
| 申请公布号 | US9471189(B2) | 申请公布日期 | 2016.10.18 |
| 申请号 | US201414549671 | 申请日期 | 2014.11.21 |
| 申请人 | MStar Semiconductor, Inc. | 发明人 | Liu Tzu-Wei |
| 分类号 | G06F3/044 | 主分类号 | G06F3/044 |
| 代理机构 | Edell, Shapiro & Finnan, LLC | 代理人 | Edell, Shapiro & Finnan, LLC |
| 主权项 | 1. A sensing electrode structure, formed on a substrate of a touch device, comprising: a first sensing electrode row; a second sensing electrode row, parallel to the first sensing electrode row, comprising a plurality of second sensing electrode units; and a guard ring, surrounding the second sensing electrode row, comprising a plurality of guard electrodes arranged between each two of the second sensing electrode units, wherein the first sensing electrode row comprises a plurality of first sensing electrode units, and each of the first sensing electrode units corresponds to one of the second sensing electrode units. | ||
| 地址 | Hsinchu Hsien TW | ||