| 摘要 |
PURPOSE:To obtain a solar cell in which a defect can be repaired after a protective layer is laminated and which can be manufactured with high yield by annealing it at 150-80 deg.C while applying a reverse bias electric field of 10<5>V/cm or more between electrodes. CONSTITUTION:A reverse bias electric field is applied between both lower and upper electrodes 2 and 4 to be annealed after a protective layer 7 is adhered to complete a module structure. A bias is so applied in response to a structure and thickness as to generate an electric field of 10<5>V/cm or more at a pin structure of a photovoltaic layer by selectively applying a reverse bias to its junction. This reverse bias electric field is applied through annealing, i.e., heating, holding and then cooling. The temperature of the annealing is so lower than 150 deg.C as not to generate a thermal damage at the adhered layer 6, a board 1, the layer 7, determined according to the heating and holding time, and is desirably 80 deg.C or higher due to a real processing time, etc. Thus, a solar cell exhibiting desirable characteristics is obtained with high yield. |
