发明名称 Electron beam exposure method and system for exposing a pattern on a substrate with an improved accuracy and throughput
摘要 An electron beam exposure process includes a step of producing a plurality of electron beam elements from a single electron beam by shaping and radiating the plurality of electron beam elements on a substrate. The exposure is achieved in a plurality of times with respective electron beam patterns by means of different sets of electron beam elements, wherein the electron beam elements of different sets are produced simultaneously and deflected simultaneously so as to scan the substrate consecutively. The electron beam elements in one set are offset from corresponding electron beam elements of the other set by a pitch of M/N wherein N represents the number of the electron beam sets and M is an integer smaller than N.
申请公布号 US5369282(A) 申请公布日期 1994.11.29
申请号 US19930098875 申请日期 1993.07.29
申请人 FUJITSU LIMITED 发明人 ARAI, SOICHIRO;YASUDA, HIROSHI;KAI, JUNICHI;OAE, YOSHIHISA
分类号 G03F7/20;H01J37/317;(IPC1-7):H01J37/302 主分类号 G03F7/20
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