发明名称 Partially or completely encapsulated top electrode of a ferroelectric capacitor
摘要 A ferroelectric capacitor includes a bottom electrode, a top electrode, and a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance.
申请公布号 US5864932(A) 申请公布日期 1999.02.02
申请号 US19960728740 申请日期 1996.10.11
申请人 RAMTRON INTERNATIONAL CORPORATION 发明人 EVANS, THOMAS A.;ARGOS, JR., GEORGE
分类号 H01L21/02;H01L21/28;H01L21/336;H01L21/8246;H01L27/115;H01L29/78;H01L29/92;(IPC1-7):H01G7/00 主分类号 H01L21/02
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