| 摘要 |
PROBLEM TO BE SOLVED: To provide the forming method of a silicon-germanium(SiGe) film, which reduces the surface roughness of the silicon-germanium(SiGe) film and can improve the set up of gate structure and an electric characteristic. SOLUTION: The method includes a step for fixing a semiconductor substrate where a gate oxidized film is formed in a vapor deposition chamber, a step for making SiH4 and H2 flow into the vapor deposition chamber and forming silicon fine particles on the surface of the gate oxidized film by using a plasma system, and a step for making SiH4 , GeH4 and H2 flow into the vapor deposition chamber and vapor-depositing silicon germanium with the multiple silicon fine particles as a center.
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