发明名称 SUBSTRATE PROCESSING APPARATUS AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
摘要 PROBLEM TO BE SOLVED: To reduce damage to a substrate and such by using plasma when processing a substrate and reduce a substrate processing temperature.SOLUTION: The substrate processing apparatus includes: a reaction tube, accommodating a substrate holding tool for loading and holding a plurality of substrates and a heat insulation part installed under the substrate holding tool, having inside a processing chamber for processing the substrates; a buffer chamber for generating plasma in the reaction tube; and a protective tube, having a rod-shaped electrode inside, erected along a loading direction of the substrate in the buffer chamber. The protective tube is installed in the buffer chamber by penetrating the reaction tube, and is provided outside of the reaction tube at a height position of the insulation part in the reaction tube.SELECTED DRAWING: Figure 3
申请公布号 JP2016106415(A) 申请公布日期 2016.06.16
申请号 JP20160014231 申请日期 2016.01.28
申请人 HITACHI KOKUSAI ELECTRIC INC 发明人 ASAI MASAYUKI;HONDA KOICHI;UMEMOTO MAMORU
分类号 H01L21/31;C23C16/44;C23C16/50;H01L21/316;H01L21/318 主分类号 H01L21/31
代理机构 代理人
主权项
地址