Deposition method and deposition apparatus

摘要

Disclosed is a method for depositing an insulating film with a high coverage through a low temperature process. The deposition method deposits an insulating film on a substrate using a deposition apparatus which includes a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply a gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container. The deposition method includes depositing an insulating film that includes SiN on the substrate by supplying into a gas formed by adding H2 to trisilylamine into the processing container and generating plasma.

主权项

1. A method of depositing an insulating film on a substrate, the method comprising:
providing a deposition apparatus including a processing container that defines a processing space in which plasma is generated, a gas supply unit configured to supply gas into the processing space, and a plasma generating unit configured to generate plasma by supplying microwave into the processing container; depositing an insulating film that includes SiN on the substrate by supplying a mixed gas formed by adding H2 to trisilylamine into the processing container and generating plasma in the processing space; after the depositing of the insulating film including SiN, substituting SiH remaining within the insulating film with SiN by supplying a gas including N2 and generating plasma; and repeating the depositing and the substituting plural times, wherein, during the depositing of the insulating film, a pressure within the processing container is controlled to be 400 mTorr or more, and the pressure within the processing container during the depositing of the insulating film is higher than a pressure within the processing container during the substituting of the insulating film, and a processing time for the substituting of the insulating film ranges from 10 seconds to 20 seconds.