LIGHT EMITTING DIODE CHIP HAVING DISTRIBUTED BRAGG REFLECTOR AND METHOD OF FABRICATING THE SAME

摘要

A light-emitting diode package, including a package body and leads, the package body including a mounting surface, a light-emitting structure disposed on the mounting surface, the light-emitting structure including an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer, a phosphor layer disposed on the light-emitting structure, and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface. The distributed Bragg reflector includes a first distributed Bragg reflector and a second distributed Bragg reflector, and an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.

主权项

1. A light-emitting diode package, comprising:
a package body and leads, the package body comprising a mounting surface; a light-emitting structure disposed on the mounting surface, the light-emitting structure comprising an active layer disposed between a first conductive-type semiconductor layer and a second conductive-type semiconductor layer; a phosphor layer disposed on the light-emitting structure; and a distributed Bragg reflector disposed between the light-emitting structure and the mounting surface, wherein the distributed Bragg reflector comprises a first distributed Bragg reflector and a second distributed Bragg reflector; and wherein an optical thickness of material layers within the first distributed Bragg reflector is greater than an optical thickness of material layers within the second distributed Bragg reflector.