| 摘要 |
<p>Thin films are deposited by generating film deposition vapors from solid film precursor materials including those in the form of powder in a crucible (42) or wires (38), positioned inside the cavity (22) of one or more nozzles (20), and carrying the vapors in a low pressure supersonic jet of inert gas to the surface (26) of a prepared substrate (28) where the vapors deposit to form a thin film. A microwave discharge plasma may be generated in the cavity (132) of one or more additional nozzles (130) into which a reactive gas is introduced, to form a supersonic jet of activated reactive gas carried in an inert gas. Motion of a substrate (82) relative to the nozzles (20, 130) permits a film formed from the solid precursor materials to be treated with the activated reactive gas to immediately convert the film into an oxide or nitride material.</p> |
