发明名称 |
LONG RANGE ORDERED AND EPITAXIAL OXIDES INCLUDING SIO2, ON SI, SIXGE1-X, GAAS AND OTHER SEMICONDUCTORS, MATERIAL SYNTHESIS, AND APPLICATIONS THEREOF |
摘要 |
A semiconductor processing method capable of producing highly ordered, ultra thin dielectrics, including gate oxide and other semiconductor dielectrics, and interphase phases with low defect density. The process includes a degrease step (21), an etch (22), a primary oxidation (24), and then a passivation step (26) which utilizes hydrofluoric acid to passivate the cleaned silicon surface with hydrogen. Dielectric layers may then be formed with low interface defect density, low flat-band voltages, and low fixed charge on semiconductor substrates. Ultra-thin layers of between 1/2 to 10 nm and thicker have been formed on Si(100). Devices, dielectrics and interphase phases formed using this process are claimed as well.
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申请公布号 |
CA2311766(A1) |
申请公布日期 |
1999.06.10 |
申请号 |
CA19982311766 |
申请日期 |
1998.11.25 |
申请人 |
ARIZONA BOARD OF REGENTS, ACTING ON BEHALF OF ARIZONA STATE UNIVERSITY |
发明人 |
HERBOTS, NICOLE;SWATI, BANERJEE;HURST, QUINTON B.;ATLURI, VASUDEVA P.;XIANG, JIONG;BRADLEY, JAMES D. |
分类号 |
H01L21/04;H01L21/28;H01L21/304;H01L21/306;H01L21/316;H01L29/51;(IPC1-7):H01L21/316 |
主分类号 |
H01L21/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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