SUBSTRATE WITH SILICON CARBIDE FILM, METHOD FOR PRODUCING SUBSTRATE WITH SILICON CARBIDE FILM, AND SEMICONDUCTOR DEVICE

摘要

PROBLEM TO BE SOLVED: To provide: a high quality substrate with a silicon carbide film stacked on a Si substrate and including a 3C-SiC film; a method for manufacturing a substrate with a silicon carbide film, capable of manufacturing the substrate with a silicon carbide film; and a semiconductor device including the substrate with a silicon carbide film.SOLUTION: A substrate with a silicon carbide film of the present invention includes: a Si substrate 2; and a cubic silicon carbide film 3 and a mask 4 stacked on the Si substrate 2. The SiC film 3 has a first SiC film 31 provided on the upper side of the Si substrate 2 and a second SiC film 32 provided on the upper side of the first SiC film 31. The mask 4 has: a first mask 41 provided on the upper side of the Si substrate 2 and including an opening (first opening) 45; and a second mask 42 provided on the first SiC film 31 and including an opening (second opening) 46. The width W1 [μm] of the first opening 45 and the thickness T1 [μm] of the first mask 41 satisfy the relationship of T1