Bipolar Semiconductor Device Having a Deep Charge-Balanced Structure

摘要

There are disclosed herein various implementations of a bipolar semiconductor device having a deep charge-balanced structure. Such a device includes a drift region having a first conductivity type situated over an anode layer having a second conductivity type. The device also includes a control trench extending through an inversion region having the second conductivity type into the drift region, and bordered by a cathode diffusion having the first conductivity type. In addition, the device includes a deep sub-trench structure situated under the control trench. The deep sub-trench structure includes one or more first conductivity regions having the first conductivity type and one or more second conductivity region having the second conductivity type, the one or more first conductivity regions and the one or more second conductivity regions configured to substantially charge-balance the deep sub-trench structure. In one implementation, the bipolar semiconductor device is an insulated-gate bipolar transistor (IGBT).

主权项

1. A bipolar semiconductor device comprising:
a drift region having a first conductivity type situated over an anode layer having a second conductivity type opposite said first conductivity type; a control trench extending through an inversion region having said second conductivity type into said drift region, said control trench bordered by a cathode diffusion having said first conductivity type; a deep sub-trench structure situated under said control trench, said deep sub-trench structure comprising at least one first conductivity region having said first conductivity type and at least one second conductivity region having said second conductivity type; said at least one first conductivity region and said at least one second conductivity region configured to substantially charge-balance said deep sub-trench structure.