| 主权项 |
1. An on-chip magnetic device consisting of:
a first magnetic unit consisting of first and second magnetic layers and a non-magnetic spacer layer therebetween, wherein the non-magnetic spacer layer has a thickness of 5 to 20 nanometers and is selected from the group consisting of copper, molydenum, zinc, rubidium, gold, silver, selenium, tellurium, sulfur, phosphorous, gallium, chromium, rhenium, indium, tin, nickel phosphorous, nickel boron, and non-magnetic alloys thereof; at least one additional magnetic unit consisting of first and second magnetic layers and the non-magnetic spacer layer therebetween; a resistive spacer disposed between the first and the at least one additional magnetic units, wherein the resistive spacer is at a thickness of 100 nm to 1 micron and is selected from the group consisting of selenium, bismuth, tellurium, phosphorous, sulfur, germanium, antimony, and alloys thereof that can be electrochemically reduced, and wherein a total thickness of the first and second magnetic layers plus the non-magnetic spacer layer within the magnetic unit or the at least one additional magnetic unit consisting of first and second magnetic layers and the non-magnetic spacer layer therebetween is within a skin depth, wherein the skin depth is a depth below a surface of a respective magnetic layer at which current density has fallen to 1/e of surface current density. |
