Semiconductor device having structure with fractional dimension of the minimum dimension of a lithography system

摘要

A method for forming a semiconductor device is provided including processing a wafer having a spacer layer and a structure layer, the spacer layer is over the structure layer. The method continues including forming a first sidewall spacer from the spacer layer, forming a structure strip from the structure layer below the first sidewall spacer, forming a masking structure over and intersecting the structure strip, and forming a vertical post from the structure strip below the masking structure.

主权项

1. A method for forming a semiconductor device comprising:
processing a wafer having a spacer layer and a structure layer formed over a device layer, the spacer layer being a topmost layer having an exposed top surface in said wafer and disposed directly on a top surface of the structure layer, and the structure layer disposed directly on a top surface of the device layer, wherein no intermediate layer exists between the spacer layer and the structure layer and between the structure layer and the device layer; depositing first sidewall spacers adjacent to and against parallel sides of the spacer layer, said first sidewall spacers being isolated parallel strips deposited directly on the top surface of said structure layer with no intermediate layer between the first sidewall spacers and the structure layer, each of said first sidewall spacers having a width of a tenth to a quarter of a minimum pitch capability of a lithography system utilized to manufacture said semiconductor device, said minimum pitch being a distance between said first sidewall spacers; forming structure strips from the structure layer directly below the first sidewall spacers; forming a filler around the structure strips; planarizing the structure strips and the filler so that the structure strips and the filler have a coplanar top surface; forming a masking structure having second sidewall spacers directly on the coplanar top surface of the filler and the structure strips, and intersecting the structure strips, wherein no intermediate layer exists between the second sidewall spacers and the structure strips; forming vertical posts from the structure strips directly below intersections of the second sidewall spacers and the structure strips, the vertical posts having a pitch in a range about said minimum pitch to said quarter of the minimum pitch capability of said lithography system utilized to manufacture said semiconductor device; wherein at least one of the vertical posts comprises electrically conductive material.