| 摘要 |
The present invention provides a Group III nitride semiconductor light-emitting device in which a flat semiconductor layer is grown on a sapphire substrate provided with an uneven shape, and a method for producing the same. When the area ratio R of the flat surface area S on the main surface to the total area K of the sapphire substrate is 0.1 or more to less than 0.5, in formation of the semiconductor layer on the sapphire substrate having an uneven shape on the main surface thereof, at least two types of gases: a raw material gas containing a Group III element and a raw material gas containing Group V element are supplied so as to satisfy the equation 1,000≦̸Y/(2×R)≦̸1,200. In the equation, Y is the partial pressure ratio of the raw material gas containing Group V element to the raw material gas containing Group III element. |
