发明名称 SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD
摘要 PROBLEM TO BE SOLVED: To prevent generating of irregularity in finish of an active region when a large isolation region exists in a semiconductor device with an isolation region which is made flat by a CMP. SOLUTION: An isolation region 10 for isolating an active region 12 is provided on a semiconductor wafer. An annular dummy pattern 20 is provided to enclose the isolation region 10 in an inactive region which exceeds a prescribed size. An isolation region which does not exceed a prescribed width is ensured between the dummy pattern 20 and the active region 12 surrounding the inactive region.
申请公布号 JP2002016131(A) 申请公布日期 2002.01.18
申请号 JP20000197552 申请日期 2000.06.30
申请人 MITSUBISHI ELECTRIC CORP 发明人 KOBAYASHI HIROMICHI;SASAKI TAKANORI
分类号 H01L21/76;H01L21/762;(IPC1-7):H01L21/76 主分类号 H01L21/76
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