发明名称 |
SEMICONDUCTOR DEVICE AND ITS MANUFACTURING METHOD |
摘要 |
PROBLEM TO BE SOLVED: To prevent generating of irregularity in finish of an active region when a large isolation region exists in a semiconductor device with an isolation region which is made flat by a CMP. SOLUTION: An isolation region 10 for isolating an active region 12 is provided on a semiconductor wafer. An annular dummy pattern 20 is provided to enclose the isolation region 10 in an inactive region which exceeds a prescribed size. An isolation region which does not exceed a prescribed width is ensured between the dummy pattern 20 and the active region 12 surrounding the inactive region.
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申请公布号 |
JP2002016131(A) |
申请公布日期 |
2002.01.18 |
申请号 |
JP20000197552 |
申请日期 |
2000.06.30 |
申请人 |
MITSUBISHI ELECTRIC CORP |
发明人 |
KOBAYASHI HIROMICHI;SASAKI TAKANORI |
分类号 |
H01L21/76;H01L21/762;(IPC1-7):H01L21/76 |
主分类号 |
H01L21/76 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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