发明名称 |
PROCESS AND APPARATUS FOR PURIFYING LOW-GRADE SILICON MATERIAL |
摘要 |
<p>A process and apparatus for purifying low-purity silicon material and obtaining a higher-purity silicon material is provided. The process includes providing a melting apparatus equipped with an oxy-fuel burner, and melting the low-purity silicon material in the melting apparatus to obtain a melt of higher-purity silicon material. The melting apparatus may include a rotary drum furnace and the melting of the low- purity silicon material may be carried out at a temperature in the range from 1410°C to 1700°C under an oxidizing or reducing atmosphere. A synthetic slag may be added to the molten material during melting. The melt of higher-purity silicon material may be separated from a slag by outpouring into a mould having an open top and insulated bottom and side walls. Once in the mould, the melt of higher-purity silicon material can undergo controlled unidirectional solidification to obtain a solid polycrystalline silicon of an even higher purity.</p> |
申请公布号 |
WO2008031229(A1) |
申请公布日期 |
2008.03.20 |
申请号 |
WO2007CA01646 |
申请日期 |
2007.09.13 |
申请人 |
SILICIUM BECANCOUR INC.;LEBLANC, DOMINIC;BOISVERT, RENE |
发明人 |
LEBLANC, DOMINIC;BOISVERT, RENE |
分类号 |
C01B33/037;C01B33/02;C01B33/12;C30B29/06;F27B7/06 |
主分类号 |
C01B33/037 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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