| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor light emitting element achieving an optical output to a further degree than a conventional semiconductor light emitting element.SOLUTION: A semiconductor light emitting element comprises: a semiconductor layer including an n-type semiconductor layer, a p-type semiconductor layer and an active layer arranged between the n-type semiconductor layer and the p-type semiconductor layer; a first electrode formed in contact with a first surface out of surfaces of the semiconductor layer; and a second electrode formed in contact with a second surface out of the surfaces of the semiconductor layer, on the side opposite to the first surface. The semiconductor layer has on the first surface side, a first region and a second region at a height position higher than that of the first region. The first electrode is formed in the second region of the semiconductor layer and composed of a material exhibiting high reflectance to light emitted from the active layer.SELECTED DRAWING: Figure 1 |
