| 摘要 |
PROBLEM TO BE SOLVED: To provide an examination apparatus and examination method with which mask whose defect in photolithography mask is corrected may be examined at high-accuracy.SOLUTION: The apparatus comprises: an optical image comparison part 612 carrying out either or both of first comparison between a first optical image passed through a sample and a first reference image thereof and second comparison between a second optical image reflected by the sample and a second reference image thereof, and either or both of third comparison between the first reference image and a third optical image and fourth comparison between the second reference image and a fourth optical image; a map creating part 660 creating first to fourth maps respectively based on first to fourth comparison; a map comparison part 614 carrying out either or both of fifth comparison between first and third maps and sixth comparison between second and fourth maps based on defect correction method information; and determining parts 624, 626, 628, 629 determining whether the correction is pertinent or not based on either or both of the fifth comparison and the sixth comparison.SELECTED DRAWING: Figure 1 |
