High voltage deep trench capacitor

摘要

A semiconductor process and apparatus provide a high voltage deep trench capacitor structure (10) that is integrated in an integrated circuit, alone or in alignment with a fringe capacitor (5). The deep trench capacitor structure is constructed from a first capacitor plate (4) that is formed from a doped n-type SOI semiconductor layer (e.g., 4a-c). The second capacitor plate (3) is formed from a doped p-type polysilicon layer (3a) that is tied to the underlying substrate (1).

主权项

1. An integrated circuit deep trench capacitor structure, comprising:
a first capacitor plate formed from a doped SOI semiconductor layer that is separated from a substrate layer by a buried insulator layer; a trench oxide layer that is located in a first trench opening formed in the doped SOI semiconductor layer and adjacent to the first capacitor plate, where the first trench opening exposes the buried isolation layer; and a second capacitor plate that is located in a second trench opening formed in the trench oxide layer and buried isolation layer to expose a portion of the substrate layer, the second capacitor plate comprising a doped semiconductor layer that is located adjacent to the trench oxide layer and that is tied to the substrate layer; where the first and second capacitor plates are separated from one another by the trench oxide layer and where the second trench opening is positioned inside the first trench opening.