发明名称 |
Ga2O3 semiconductor element |
摘要 |
A Ga2O3 semiconductor element includes: an n-type β-Ga2O3 single crystal film, which is formed on a high-resistance β-Ga2O3 substrate directly or with other layer therebetween; a source electrode and a drain electrode, which are formed on the n-type β-Ga2O3 single crystal film; and a gate electrode, which is formed on the n-type β-Ga2O3 single crystal film between the source electrode and the drain electrode. |
申请公布号 |
US9397170(B2) |
申请公布日期 |
2016.07.19 |
申请号 |
US201214343367 |
申请日期 |
2012.09.07 |
申请人 |
TAMURA CORPORATION;NATIONAI INSTITUTE OF INFORMATION AND COMMUNICATIONS TECHNOLOGY |
发明人 |
Sasaki Kohei;Higashiwaki Masataka |
分类号 |
H01L29/24;H01L29/78;H01L29/786;H01L29/812;H01L21/02;H01L29/772;H01L29/66;H01L29/04 |
主分类号 |
H01L29/24 |
代理机构 |
McGinn IP Law Group PLLC |
代理人 |
McGinn IP Law Group PLLC |
主权项 |
1. A Ga2O3-based semiconductor element, comprising:
a β-Ga2O3 single crystal film that is formed on a main surface of a β-Ga2O3 substrate, the main surface being rotated from 50° to 90° with respect to a (100) plane; a source electrode and a drain electrode that are formed on a same side of the β-Ga2O3 single crystal film; a gate electrode that is formed on the β-Ga2O3 single crystal film between the source electrode and the drain electrode; a first region formed in the β-Ga2O3 single crystal film under the source electrode and the drain electrode and including a controlled first dopant concentration; and a second region formed to surround the first region and including a controlled second dopant concentration lower than the controlled first dopant concentration, wherein the β-Ga2O3 substrate includes a p-type dopant to be a high electrical resistance. |
地址 |
Tokyo JP |