发明名称 |
NITRIDE SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME |
摘要 |
A nitride semiconductor device is provided which reduces the contact resistance at the interface between a P-type electrode and a nitride semiconductor layer. A nitride semiconductor device includes a P-type nitride semiconductor layer and a P-type electrode formed on the P-type nitride semiconductor layer. The P-type electrode is formed by successive laminations of a metal layer of a metal having a work function of 5.1 eV or more, a Pd layer of palladium, and a Ta layer of tantalum on the P-type nitride semiconductor layer.
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申请公布号 |
US2009160054(A1) |
申请公布日期 |
2009.06.25 |
申请号 |
US20080269914 |
申请日期 |
2008.11.13 |
申请人 |
MITSUBISHI ELECTRIC CORPORATION |
发明人 |
SHIOZAWA KATSUOMI;KANAMOTO KYOZO;OISHI TOSHIYUKI;TARUI YOICHIRO;TOKUDA YASUNORI |
分类号 |
H01L21/283;H01L29/45 |
主分类号 |
H01L21/283 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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