| 摘要 |
PURPOSE:To provide the manufacturing method of a stacked memory cell which is suitable for miniaturization. CONSTITUTION:A lower-part electrode 23 in a charge storage part for a stacked memory cell is etched while a silicon oxide film 24 and a sidewall 26 formed on its sidewall are used as a mask. When the mask material is removed after its etching operation, a readout transistor and the like are protected by a silicon nitride film 22 formed directly under the lower-part electrode 23. |
