Discrete three-dimensional memory

摘要

The present invention discloses a discrete three-dimensional memory (3D-M). It comprises at least a 3D-array die and at least a peripheral-circuit die. At least an off-die peripheral-circuit component of the 3D-M arrays is located on the peripheral-circuit die instead of the 3D-array die. The 3D-array die and the peripheral-circuit die have substantially different back-end-of-line (BEOL) structures.

主权项

1. A discrete three-dimensional memory (3D-M), comprising:
a 3D-array die comprising at least a 3D-M array, wherein said 3D-M array comprises a plurality of vertically stacked memory levels; a peripheral-circuit die comprising at least an off-die peripheral-circuit component of said 3D-M array, wherein said off-die peripheral-circuit component is absent from said 3D-array die; means for coupling said 3D-array die and said peripheral-circuit die; wherein the number of address-line levels in said 3D-array die is at least twice as much as the number of interconnect levels in said peripheral-circuit die; and, said 3D-array die and said peripheral-circuit die are separate dice.