| 摘要 |
PROBLEM TO BE SOLVED: To enable configuring a multiplication layer of an avalanche photodiode from a semiconductor in which holes are not ionized at the time of applying a voltage.SOLUTION: An avalanche photodiode includes a p-type first contact layer 102 formed on a substrate 101, an n-type second contact layer 103 formed above the substrate 101, and a light absorption layer 104 formed between the first contact layer 102 and the second contact layer 103. The avalanche photodiode further includes a multiplication layer 105 formed between the light absorption layer 104 and the second contact layer 103, an n-type electric-field control layer 106 formed between the light absorption layer 104 and the multiplication layer 105, and a reflection structure layer 107 formed between the light absorption layer 104 and the multiplication layer 105. The multiplication layer 105 is composed of a compound semiconductor in which holes are not ionized at the time of applying a voltage. |
