| 摘要 |
Structures and methods are provided which include a selective electroless copper metallization. The present invention includes a novel methodology for forming copper vias on a substrate, including depositing a thin film seed layer of Palladium (Pd) or Copper (Cu) on a substrate to a thickness of less than 15 nanometers (nm). A number of via holes is defined above the seed layer. A layer of copper is deposited over the seed layer using electroless plating to fill the via holes to a top surface of the patterned photoresist layer. The method can be repeated any number of times, forming second, third and fourth layers of copper. The photoresist layers along with the seed layers in other regions can then be removed, such as by oxygen plasma etching, such that a chemical mechanical planarization process is avoided.
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