| 发明名称 |
METHOD FOR FABRICATING CAPACITOR OF SEMICONDUCTOR DEVICE |
| 摘要 |
PURPOSE: A method for fabricating a capacitor of a semiconductor device is provided to maximize charging capacitance of a Si3N4/SiO2(NO) capacitor by decreasing the thickness of the dielectric, and to reduce defects by decreasing the height of the capacitor due to high charging capacitance. CONSTITUTION: A storage node(25) is formed on a semiconductor wafer. A dielectric layer(27) formed of a cycle silicon nitride layer is formed on the storage node. An upper electrode(29) is formed on the dielectric layer. The cycle silicon nitride layer includes either cycle Si3N4 or cycle SiOxNy(x from 0.1 to 0.9 and y from 0.1-2).
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| 申请公布号 |
KR20040013201(A) |
申请公布日期 |
2004.02.14 |
| 申请号 |
KR20020046029 |
申请日期 |
2002.08.05 |
| 申请人 |
HYNIX SEMICONDUCTOR INC. |
发明人 |
LEE, TAE HYEOK;PARK, CHEOL HWAN;PARK, DONG SU;WOO, SANG HO |
| 分类号 |
C23C16/42;H01L21/02;H01L21/28;H01L21/31;H01L21/314;H01L21/318;H01L21/82;H01L21/8234;H01L21/8242;H01L21/8244;H01L27/04;H01L27/108;(IPC1-7):H01L27/04 |
主分类号 |
C23C16/42 |
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