| 发明名称 |
SILICON CARBIDE SEMICONDUCTOR SUBSTRATE AND METHOD FOR MANUFACTURING SAME |
| 摘要 |
A silicon carbide semiconductor substrate includes a first main surface and a second main surface opposite to the first main surface. The first main surface has a maximum diameter of more than 100 mm, and the silicon carbide semiconductor substrate has a thickness of not more than 700 μm. A dislocation density is not more than 500/mm2 at an arbitrary region having an area of 1 mm2 in a region within 5 mm from an outer circumferential end portion of the first main surface toward a center of the first main surface. Accordingly, there is provided a silicon carbide semiconductor substrate allowing for suppression of generation of cracks. |
| 申请公布号 |
US2016233080(A1) |
申请公布日期 |
2016.08.11 |
| 申请号 |
US201415024110 |
申请日期 |
2014.08.11 |
| 申请人 |
SUMITOMO ELECTRIC INDUSTRIES, LTD. |
发明人 |
Tanaka So;Okita Kyoko;Nishiguchi Taro;Kubota Ryosuke;Kanbara Kenji |
| 分类号 |
H01L21/02;H01L29/04;H01L29/16 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon carbide semiconductor substrate comprising a first main surface and a second main surface opposite to the first main surface,
the first main surface having a maximum diameter of more than 100 mm, the silicon carbide semiconductor substrate having a thickness of not more than 700 μm, a dislocation density being not more than 500/mm2 at an arbitrary region having an area of 1 mm2 in a region within 5 mm from an outer circumferential end portion of the first main surface toward a center of the first main surface. |
| 地址 |
Osaka JP |
