Semiconductor device having drain side contact through buried oxide

摘要

A semiconductor device configured to provide high heat dissipation and improve breakdown voltage comprises a substrate, a buried oxide layer over the substrate, a buried n+ region in the substrate below the buried oxide layer, and an epitaxial layer over the buried oxide layer. The epitaxial layer comprises a p-well, an n-well, and a drift region between the p-well and the n-well. The semiconductor device also comprises a source contact, a first electrode electrically connecting the source contact to the p-well, and a gate over a portion of the p-well and a portion of the drift region. The semiconductor device further comprises a drain contact, and a second electrode extending from the drain contact through the n-well and through the buried oxide layer to the buried n+ region. The second electrode electrically connects the drain contact to the n-well and to the buried n+ region.

主权项

1. A semiconductor device comprising:
a substrate; a buried oxide layer over the substrate; a buried n+ region in the substrate below the buried oxide layer; an epitaxial layer over the buried oxide layer, the epitaxial layer comprising;
a p-well;an n-well; anda drift region between the p-well and the n-well; a source contact; a first electrode electrically connecting the source contact to the p-well; a gate over a portion of the p-well and a portion of the drift region; a drain contact; and a second electrode extending from the drain contact through the n-well and through the buried oxide layer to the buried n+ region, wherein the second electrode electrically connects the drain contact to the buried n+ region.