发明名称 |
Process for forming a T-shaped gate structure |
摘要 |
Using the present invention, a gate for a MESFET may be fabricated having a minimum gate length while having a low resistance gate. In addition, the present invention provides a method for forming a gate and gate recess which are perfectly aligned which is the optimal structure for high frequency power MESFETs. A two layer masking layer is fabricated having a first layer which may be etched uniformly and a second layer of lithographic material which may be photolithographic material such as AZ resist. A gate opening is patterned in the photoresist material and a metal such as gold is deposited by evaporation from acute angles on opposite sides of the gate opening in the resist. The deposited metal serves as a mask which covers all but a very small portion of the opening in the photoresist. The silicon nitride layer is then etched to form a gate opening and gate recess. Gate contact metal is then deposited in the opening thus formed and the nitride, photoresist and gold layers are removed, lifting off a portion of the gate metal layer thus leaving a T-shaped gate which provides a minimum length at the channel gate interface and provides a low gate resistance.
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申请公布号 |
US4599790(A) |
申请公布日期 |
1986.07.15 |
申请号 |
US19850696299 |
申请日期 |
1985.01.30 |
申请人 |
TEXAS INSTRUMENTS INCORPORATED |
发明人 |
KIM, BUMMAN;SAUNIER, PAUL |
分类号 |
H01L21/027;H01L21/285;H01L21/338;(IPC1-7):H01L21/285 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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