Method of forming a titanium silicide film involved in a semiconductor device

摘要

A method of forming a silicate glass film including phosphorus on a titanium silicide film is provided wherein a silicate glass film including phosphorus is formed on a titanium silicide film and thereafter the silicate glass film is subjected to a heat treatment at a temperature in the range from 650 DEG C. to 950 DEG C. for a time in the range from 20 to 70 seconds to cause a fineness reaction of the silicate glass film and suppress a cohesion reaction of the titanium silicide film.