| 摘要 |
PROBLEM TO BE SOLVED: To improve reliability to a temperature of application environment, by controlling impurity dosage, making temperature dependency of carrier mobility different in each layer, and making temperature dependency of carrier mobility of the whole at most specific % in a specific temperature range. SOLUTION: When a layer 2 and a layer 3 which are different in temperature characteristics are laminated, the carrier mobilityμmH of the whole semiconductor crystal is shown by a formula. In the formula, conductivitiesσ01 ,σ02 and carrier mobilitiesμ01 ,μ02 depend on a temperature, and can not be arbitrarily changed, but film thickness d01 , d02 can be changed arbitrarily. By optimizing the film thicknesses d01 , d02 , semiconductor multilayer structure whose carrier mobility scarcely changes can be obtained. Thereby a semiconductor thin film wherein the change of carrier mobility to the temperature change of 100 deg.C in the temperature range from 0 deg.C to +100 deg.C is at most 5% can be obtained.
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