发明名称 METHOD FOR VIA-FILLING
摘要 PROBLEM TO BE SOLVED: To form via-filling efficiently with simple operation by first forming metal film in the via hole by the use of electroless plating, and then subjecting the resulting via hole to electrical metal-plating by PR-electrolysis. SOLUTION: This method can be applied to the via hole having a diameter of about 10-1000μm and a hole depth of about 10-1000μm. The via hole is treated by conventional method to make its bottom part and side surface electro-conductive, and then these parts are subjected to electroless metal plating and PR-electrolysis. Though the conditions suitable for PR-electrolysis depend on a kind of metal to be deposited, bath components, the shape of the via hole, etc., PR-electrolysis is generally carried out under following conditions. The ratio of time kept as cathode to time kept as anode is preferably in a range of about 2:1-5:1. PR-period is preferably about 10-100 sec., and total electrolysis time is in the range of about 0.1-10 hrs. The bath capable of giving Cu, Ni, Au, Ag, Pd and Sn films or alloy films of these metals is selected as the metal plating bath capable of being applied.
申请公布号 JPH1143797(A) 申请公布日期 1999.02.16
申请号 JP19970213873 申请日期 1997.07.25
申请人 HONMA HIDEO;EBARA YUUJIRAITO KK 发明人 HONMA HIDEO;MANIWA ASAO;KOBAYASHI TAKESHI;FUJINAMI TOMOYUKI
分类号 C25D7/00;H05K3/46;(IPC1-7):C25D7/00 主分类号 C25D7/00
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