NON-VOLATILE SEMICONDUCTOR MEMORY APPARATUS AND ITS DRIVING METHOD AND METHOD FOR MANUFACTURING THE SAME

摘要

PROBLEM TO BE SOLVED: To improve hot hall durability in a non-volatile semiconductor memory apparatus, and to reduce the occupancy area of a memory cell while securing the advantage of a 2T structure p channel type flash memory where margin enlargement for writing and erasure is realized. SOLUTION: A p-type source region 2 and a p-type drain region 3 are formed on the surface of an n-type semiconductor layer 1, and a charge storage electrode 5 is formed through a tunnel oxide film 4 at the upper part of a channel region interposed between the p-type source region 2 and the p-type drain region 3 at a position overlapped with the p type drain region 3. A selection electrode 7 is formed through an insulating layer 6 at the upper part of the channel region interposed between the p-type source region 2 and the p-type drain region 3 at a position overlapped with the p-type source region 2, and a control electrode 9 is formed through an insulating film 8 at the upper part of the charge storage electrode 5. COPYRIGHT: (C)2005,JPO&NCIPI