发明名称 |
Image sensor having a charge storage region provided within an implant region |
摘要 |
A deep implanted region of a first conductivity type located below a transistor array of a pixel sensor cell and adjacent a doped region of a second conductivity type of a photodiode of the pixel sensor cell is disclosed. The deep implanted region reduces surface leakage and dark current and increases the capacitance of the photodiode by acting as a reflective barrier to photo-generated charge in the doped region of the second conductivity type of the photodiode. The deep implanted region also provides improved charge transfer from the charge collection region of the photodiode to a floating diffusion region adjacent the gate of the transfer transistor.
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申请公布号 |
US2006223213(A1) |
申请公布日期 |
2006.10.05 |
申请号 |
US20060434767 |
申请日期 |
2006.05.17 |
申请人 |
RHODES HOWARD;MOULI CHANDRA |
发明人 |
RHODES HOWARD;MOULI CHANDRA |
分类号 |
H01L21/00;H01L27/146;H01L31/0352;H01L31/062;H01L31/113 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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