发明名称 |
METHOD OF SUBSTRATE TREATMENT, COMPUTER-READABLE RECORDING MEDIUM, SUBSTRATE TREATING APPARATUS AND SUBSTRATE TREATING SYSTEM |
摘要 |
<p>A method of substrate treatment comprising, with the use of a sheet-feed substrate treating apparatus provided with a first treatment position for introducing of nitrogen atoms in a highly dielectric film and a second treatment position for heat treatment of the highly dielectric film, sequentially delivering multiple substrates to be treated one by one to the first and second treatment positions to thereby sequentially carry out the nitrogen atom introduction treatment and heating treatment on the highly dielectric film of the substrates to be treated, wherein after the treatment in the first treatment position, treatment of the resultant substrates in the second treatment position is begun within 30 sec. ® KIPO & WIPO 2008</p> |
申请公布号 |
KR20080025081(A) |
申请公布日期 |
2008.03.19 |
申请号 |
KR20077030143 |
申请日期 |
2007.04.25 |
申请人 |
TOKYO ELECTRON LIMITED |
发明人 |
ARUGA MIKI;YAMAZAKI KAZUYOSHI;AOYAMA SHINTARO;SHIMOMURA KOUJI |
分类号 |
H01L21/316;H01L21/31;H01L21/336;H01L29/78 |
主分类号 |
H01L21/316 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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