发明名称 |
Thin film device and method for manufacturing thin film device |
摘要 |
In a thin film device including a thin film electrode which has a main electrode layer formed of tungsten, a thin film electrode having a low resistivity is realized. There is provided a thin film device including a thin film electrode that has an underlayer and a main electrode layer formed on the underlayer. The underlayer is formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer is formed of tungsten having a crystalline structure with a wavy-like surface morphology. |
申请公布号 |
US9368247(B2) |
申请公布日期 |
2016.06.14 |
申请号 |
US201314086639 |
申请日期 |
2013.11.21 |
申请人 |
Murata Manufacturing Co., Ltd. |
发明人 |
Umeda Keiichi |
分类号 |
H01B1/02;H01G5/16;H01G4/33;B81C1/00;H03H9/17;C23C14/16;C23C14/34;H03H9/24;H03H9/13;C23C14/02;H03H3/02;H03H3/04;H03H9/02 |
主分类号 |
H01B1/02 |
代理机构 |
Studebaker & Brackett PC |
代理人 |
Studebaker & Brackett PC |
主权项 |
1. A thin film device comprising:
a thin film electrode including an underlayer and a main electrode layer formed on the underlayer, the underlayer being formed of a titanium-tungsten alloy having a crystalline structure with a wavy-like surface morphology, and the main electrode layer being formed of tungsten having a crystalline structure with a wavy-like surface morphology; and a plate including a fixed thin film electrode, wherein the thin film electrode is provided to flex toward the fixed thin film electrode of the plate with application of DC voltage across the thin film electrode and the fixed thin film electrode. |
地址 |
Kyoto-fu JP |