| 发明名称 | Circuit simulating method, circuit simulating apparatus, and method of manufacturing semiconductor device | ||
| 摘要 | The circuit simulating method according to an embodiment includes obtaining a first electrical characteristic value of a circuit element that operates under a predetermined operational condition. The circuit simulating method includes correcting the first electrical characteristic value based on a period in which application of an electrical stress equal to or higher than a reference value is stopped during operation of the circuit element. | ||
| 申请公布号 | US9495494(B2) | 申请公布日期 | 2016.11.15 |
| 申请号 | US201514645309 | 申请日期 | 2015.03.11 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Kimura Tomohisa;Abe Kazuhide |
| 分类号 | G06F17/50 | 主分类号 | G06F17/50 |
| 代理机构 | White & Case LLP | 代理人 | White & Case LLP |
| 主权项 | 1. A circuit simulating method performed by a circuit simulation apparatus, the circuit simulation method comprising: obtaining a first electrical characteristic value of a circuit element that operates under a predetermined operational condition; and correcting the first electrical characteristic value based on a period in which an electrical stress equal to or higher than a reference value is turned off during operation of the circuit element. | ||
| 地址 | Tokyo JP | ||