发明名称 |
Semiconductor manufacturing process for low dislocation defects |
摘要 |
The present invention provides a method of global stress modification which results in reducing number of dislocations in an epitaxially grown semiconducting device layer on a semiconductor substrate where the device layer and the substrate have a lattice mismatch. The invention teaches a method of imparting a convex curvature to the substrate by removing layer(s) of thin film from or adding layers of thin film to the back side of the substrate, so as to achieve a reduced dislocation density in the device layer.
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申请公布号 |
US5562770(A) |
申请公布日期 |
1996.10.08 |
申请号 |
US19940343152 |
申请日期 |
1994.11.22 |
申请人 |
INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN, BOMY A.;HOOK, TERENCE B.;KULKARNI, SUBHASH B. |
分类号 |
H01L21/205;C30B25/18;H01L21/8249;H01L27/06;(IPC1-7):C30B25/18 |
主分类号 |
H01L21/205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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