| 摘要 |
<p>Cut sections 64-1 and 64-2 are provided in end sections of a second edge 62 of a drain region 22. When a distance between a first edge 60 of a source region 20 and the second edge 62 in an intermediate area is defined as L1, a distance between the first edge 60 and end edges 52-1 and 52-2 of a channel stopper non-implanted region 50 is defined as L1, a relation of L2>/=L1 is established. By providing the channel stopper non-implanted region 50, the ESD protection capability is improved. Also, by providing the cut sections 64-1 and 64-2 in a manner to satisfy the relation of L2>/=L1, leak current is reduced. The source region 20 may also be provided with a cut section. A contacts or a metal silicide layer in the drain region 22 is provided in an intermediate area being interior with respect to boarders between the intermediate area and the respective end sections of the second edge 62. The present invention is also applicable to a lateral type bipolar protection circuit. <IMAGE></p> |
