METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a semiconductor device is provided to reduce the cell leakage current by reducing a width of a depletion area thereby reducing a size of an electric field. CONSTITUTION: A gate(3) and a low density junction section(4) are formed at a cell area and a peripheral circuit area. An insulating layer spacer(5A) is formed only at both sides of the gate(3) in the peripheral circuit area. A high density junction section(6) is formed on a semiconductor substrate(1) at both sides of the gate(3) in the peripheral circuit area. After forming an interlayer dielectric(7), a bit line(9) and a charge storage electrode contact hole are respectively formed. The low density junction section(4) in the cell area is exposed by the bit line(9). Then, a contact plug ion implanting process and a heat treatment process are carried out.