| 摘要 |
A method is provided for crystallizing a semiconductor film using a buried seed one-shot interlevel crystallization process. The method forms on a transparent substrate, a first semiconductor film having a crystallographic structure, an insulator layer with an opening, which exposes a portion of a first semiconductor film top surface in this order, and then forms a second semiconductor film with an amorphous structure in this order. The second semiconductor film is laser annealed so that the second semiconductor film is completely melted and the first semiconductor film is partially melted. Using unmelted first semiconductor film as a seed, the second semiconductor film is crystallized.
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