发明名称 |
Semiconductor memory device having metal-insulator transition film resistor |
摘要 |
A semiconductor memory device may have a lower leakage current and/or higher reliability, e.g., a longer retention time and/or a shorter refresh time. The device may include a switching device and a capacitor. A source of the switching device may be connected to a first end of a metal-insulator transition film resistor, and at least one electrode of the capacitor may be connected to a second end of the metal-insulator transition film resistor. The metal-insulator transition film resistor may transition between an insulator and a conductor according to a voltage supplied to the first and second ends thereof.
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申请公布号 |
US2008316807(A1) |
申请公布日期 |
2008.12.25 |
申请号 |
US20080230087 |
申请日期 |
2008.08.22 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
HYUN JAE-WOONG;YOO IN-KYEONG;PARK YOON-DONG;CHO CHOONG-RAE;CHO SUNG-II |
分类号 |
G11C11/00 |
主分类号 |
G11C11/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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