| 发明名称 |
SEMICONDUCTOR INTEGRATED CIRCUIT DEVICE |
| 摘要 |
Disclosed herein is a semiconductor integrated circuit device including a standard cell with a fin extending in a first direction. The fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin constitute an active transistor. The fin and a dummy gate line provided in parallel with the gate line constitute a dummy transistor. The active transistor shares a node as its source or drain with the dummy transistor. |
| 申请公布号 |
US2016172360(A1) |
申请公布日期 |
2016.06.16 |
| 申请号 |
US201615049680 |
申请日期 |
2016.02.22 |
| 申请人 |
SOCIONEXT INC. |
发明人 |
SHIMBO Hiroyuki |
| 分类号 |
H01L27/088;H01L23/528;H01L27/02 |
主分类号 |
H01L27/088 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor integrated circuit device comprising
a standard cell having a fin extending in a first direction, wherein the standard cell comprises:
an active transistor including the fin and a gate line extending in a second direction perpendicular to the first direction and provided on the fin; anda dummy transistor including the fin and a dummy gate line provided on the fin in parallel with the gate line, and the active transistor shares a node as its source or drain with the dummy transistor. |
| 地址 |
Kanagawa JP |
