发明名称 Substrate processing apparatus and substrate processing method
摘要 An underlayer is formed to cover the upper surface of a substrate and a guide pattern is formed on the underlayer. A DSA film constituted by two types of polymers is formed in a region on the underlayer where the guide pattern is not formed. Thermal processing is performed while a solvent is supplied to the DSA film on the substrate. Thus, a microphase separation of the DSA film occurs. As a result, patterns made of the one polymer and patterns made of another polymer are formed. Exposure processing and development processing are performed in this order on the DSA film after the microphase separation such that the patterns made of another polymer are removed.
申请公布号 US9375748(B2) 申请公布日期 2016.06.28
申请号 US201313943198 申请日期 2013.07.16
申请人 SCREEN Semiconductor Solutions Co., Ltd. 发明人 Harumoto Masahiko;Miyagi Tadashi;Inagaki Yukihiko;Kaneyama Koji
分类号 G03D5/00;B05C11/00;H01J37/02;H01L21/033;H01L21/67;G03F7/00;G03F7/16;G03F7/30 主分类号 G03D5/00
代理机构 Ostrolenk Faber LLP 代理人 Ostrolenk Faber LLP
主权项 1. A substrate processing apparatus, comprising: a processing film formation unit configured to form a processing film made of a directed self assembly material on a substrate; and a thermal processing unit configured to perform thermal processing while supplying a solvent to the processing film formed on the substrate by the processing film formation unit, wherein the thermal processing unit includes a thermal processing plate on which the substrate with the processing film formed thereon is placed, the thermal processing plate being configured to adjust a temperature of the placed substrate, a cover configured to surround a space above the thermal processing plate, and a solvent supplier configured to supply an evaporated solvent into the cover.
地址 JP