| 发明名称 |
DESIGN STRUCTURE FOR FINFET FINS |
| 摘要 |
A design structure for fins in a fin array that can be included in a fin field effect transistor (FinFET), the design structure including: a semiconductor fin being on a substrate and having a semiconductor fin height and a first side; a dielectric fin having a dielectric fin height and a second side facing the first side, the dielectric fin extending in a first direction substantially parallel to the first semiconductor fin; a first conformal liner lining a first trough, the first conformal liner extending across the substrate between the first side and the second side and up to approximately the dielectric fin height on the first side and on the second side; and a fill material filling the first trough to approximately the dielectric fin height. |
| 申请公布号 |
US2016315147(A1) |
申请公布日期 |
2016.10.27 |
| 申请号 |
US201615159845 |
申请日期 |
2016.05.20 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Leobandung Effendi;Yamashita Tenko |
| 分类号 |
H01L29/10;H01L29/78;H01L27/02 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device, comprising:
a fin array on a substrate and having a first semiconductor fin with a semiconductor fin height and a first side; a dielectric fin having a dielectric fin height and a second side facing the first side, the dielectric fin extending in a first direction substantially parallel to the first semiconductor fin; a first conformal liner lining a first trough, the first conformal liner extending across the substrate between the first side and the second side and up to approximately the dielectric fin height on the first side and on the second side; and a fill material filling the first trough up to approximately the dielectric fin height. |
| 地址 |
Armonk NY US |
