| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide an SiC transistor having a high manufacturing yield and is low in cost, and to provide a power converter. <P>SOLUTION: The SiC transistor has a first conductivity type SiC substrate 2, using as its raw material a low-quality SiC wafer containing unavoidable micropipe defects 3, a second conductivity-type base layer 4 formed in a laminated way on the SiC substrate, a first conductivity-type emitter layer 5 formed in a laminated way on the base layer, each base electrode 6 jointed in an ohmic manner to each missed portion generated, by missing a portion of the emitter layer or to each inverted-conductive portion, generated by inverting the conductive portion of the emitter layer, with each emitter electrode 7 jointed in the ohmic way to the emitter layer, and a collector electrode 8 jointed in the ohmic manner to the rear-surface side of the SiC substrate and requisite for the SiC substrate functioning as a collector. <P>COPYRIGHT: (C)2004,JPO |
