发明名称 CONTROL CIRCUIT OF MOS SEMICONDUCTOR ELEMENT
摘要 PURPOSE: To constitute a control circuit of an MOS semiconductor element having a load at a source terminal so that control by a signal related with one fixed potential can be attained without large costs. CONSTITUTION: A voltage source 16 having a floating potential is connected through a first controllable switch 7 between the gate terminal and source terminal of an MOS semiconductor element 1, and the first controllable switch 7 is controlled by one input voltage related with a fixed potential by a second controllable switch 8, and the second controllable switch 8 is constituted so that the output voltage can be always within the potential of a supply voltage source.
申请公布号 JPH06252727(A) 申请公布日期 1994.09.09
申请号 JP19940031915 申请日期 1994.02.02
申请人 SIEMENS AG 发明人 YOOZEFUUMACHIASU GANCHIORAA;IENE CHIHANI
分类号 H03K17/06;H03K17/687;(IPC1-7):H03K17/687 主分类号 H03K17/06
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