发明名称 |
CONTROL CIRCUIT OF MOS SEMICONDUCTOR ELEMENT |
摘要 |
PURPOSE: To constitute a control circuit of an MOS semiconductor element having a load at a source terminal so that control by a signal related with one fixed potential can be attained without large costs. CONSTITUTION: A voltage source 16 having a floating potential is connected through a first controllable switch 7 between the gate terminal and source terminal of an MOS semiconductor element 1, and the first controllable switch 7 is controlled by one input voltage related with a fixed potential by a second controllable switch 8, and the second controllable switch 8 is constituted so that the output voltage can be always within the potential of a supply voltage source.
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申请公布号 |
JPH06252727(A) |
申请公布日期 |
1994.09.09 |
申请号 |
JP19940031915 |
申请日期 |
1994.02.02 |
申请人 |
SIEMENS AG |
发明人 |
YOOZEFUUMACHIASU GANCHIORAA;IENE CHIHANI |
分类号 |
H03K17/06;H03K17/687;(IPC1-7):H03K17/687 |
主分类号 |
H03K17/06 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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